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1 article(s) from Nielsch, Kornelius

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

Elena I. Monaico,
Eduard V. Monaico,
Veaceslav V. Ursaki,
Shashank Honnali,
Vitalie Postolache,
Karin Leistner,
Kornelius Nielsch and
Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

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Figure 1: SEM images in cross section of porous GaAs layers for three different conditions of anodization in ...

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Figure 2: (A–C) SEM images in cross section at higher magnification of the porous layers obtained by anodizat...

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Figure 3: (A) SEM images of the formation of interrupted GaAs nanowires on the (111)B surface anodized in NaC...

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Figure 4: (A) SEM image in cross section of a GaAs(111)B sample anodized at 3 V for 20 min in 1 M HNO₃. (B, C...

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Figure 5: PL spectra of bulk (curve 1) and anodized (curve 2) GaAs samples measured at a temperature of 10 K.

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Figure 6: XRD pattern of the anodized GaAs(111)B sample.

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Figure 7: (A) Optical microscopy image of the opened regions in the photoresist on the glass substrate for de...

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Figure 8: Current–voltage characteristics measured in dark (curve 1) and under IR illumination with power den...

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Full Research Paper

Published 29 Jun 2020

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